document number: 89270 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 10-nov-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 dual high-voltage trench mos barrier schottky rectifier ultra low v f = 0.56 v at i f = 5 a vf30150c vishay general semiconductor new product features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? solder bath temperature 275 c max. 10 s, per jesd 22-b106 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to ie c 61249-2-21 definition typical applications for use in high frequency dc/dc converters, switching power supplies, freewheeling diodes, or-ing diode, and reverse battery protection. mechanical data case: ito-220ab molding compound meets ul 94 v-0 flammabi lity rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 2 x 15 a v rrm 150 v i fsm 140 a v f at i f = 15 a 0.71 v t j max. 150 c pin 1 pin 2 pin 3 tmbs ? ito-220ab 1 2 3 vf30150c maximum ratings (t a = 25 c unless otherwise noted) parameter symbol vf30150c unit maximum average forward rectified current (fig. 1) per device i f(av) 30 a per diode 15 peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 140 a voltage rate of change (rated v r ) dv/dt 10 000 v/s isolation voltage from term al to heatsink t = 1 min v ac 1500 v operating junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89270 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 10-nov-10 vf30150c vishay general semiconductor new product notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power dissipation characteristics electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage per diode i f = 5 a t a = 25 c v f (1) 0.72 - v i f = 7.5 a 0.81 - i f = 15 a 1.11 1.36 i f = 5 a t a = 125 c 0.56 - i f = 7.5 a 0.61 - i f = 15 a 0.71 0.79 reverse current per diode v r = 100 v t a = 25 c i r (2) 1.5 - a t a = 125 c 2.0 - ma v r = 150 v t a = 25 c - 200 a t a = 125 c 4 20 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol vf30150c unit typical thermal resistance per diode r jc 4.5 c/w ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode ito-220ab vf30150c-m3/4w 1.75 4w 50/tube tube case temperature (c) average forward rectified current (a) 40 30 0 0 25 50 75 100 125 150 175 resistive or inductive load mounted on specific heatsink 20 10 0 2 6 14 02 8 12 average forward current (a) average power loss (w) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0 6 4 10 10 4 12 8 16 14 18 d = t p /t t p t
document number: 89270 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 10-nov-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 vf30150c vishay general semiconductor new product fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics fig. 5 - typical transient thermal impedance fig. 6 - typical j unction capacitance package outline dimensions in inches (millimeters) instan taneo us forward current (a) instantaneous forward voltage (v) 0 0.2 0.4 0.8 1.2 1.6 100 10 1 0.1 t a = 100 c t a = 25 c 0.6 1.0 t a = 150 c t a = 125 c 1.4 10 20 30 40 50 60 70 80 90 100 1 0.1 0.01 0.0001 100 10 percent of rated peak reverse voltage (%) instantaneous reverse current (ma) 0.001 t a = 150 c t a = 25 c t a = 100 c t a = 125 c 10 0.1 0.01 0.1 1 10 100 t - pulse duration (s) transient thermal impedance (c/w) junction to case 1 1000 10 000 0.1 1 10 100 reverse voltage (v) junction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 mvp-p 10 100 ito-220ab 0.076 (1.93) ref. 45 ref. pi n 3 2 1 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) ref. 0.600 (15.24) 0.580 (14.73) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.191 (4.85) 0.171 (4.35) 0.671 (17.04) 0.651 (16.54) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.028 (0.71) 0.020 (0.51) 0.110 (2.79) 0.100 (2.54) 7 ref. 0.135 (3.43) dia. 0.122 (3.08) dia. 0.110 (2.79) 0.100 (2.54) 0.190 (4.83) 0.170 (4.32) 7 ref. 7 ref. 0.140 (3.56) dia. 0.125 (3.17) dia. 0.350 (8.89) 0.330 (8.38)
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